| PART |
Description |
Maker |
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| CY7C265 7C265 |
8K x 8 Registered PROM
From old datasheet system
|
Cypress
|
| CY7C265 CY7C265-15JC CY7C265-15WC CY7C265-25PC CY7 |
Memory : PROMs
8K x 8 Registered PROM
|
CYPRESS[Cypress Semiconductor]
|
| AM27S25 |
4096-Bit Bipolar Registered PROM
|
AMD
|
| 63RS881 |
High Performance 1024 x 8 Registered PROM
|
Monolithic Memories
|
| BR24L04FVM-W BR24L04-W |
512×8 bit electrically erasable PROM
|
Rohm
|
| HM6-6642-9 HM6-6642B-9 HM4-6642-9 HM1-6642-9 HM1-6 |
From old datasheet system
512 x 8 CMOS PROM
|
INTERSIL[Intersil Corporation]
|
| AM29LV800BT90SCB AM29LV800BB70FIB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
512K X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM27S65 |
4096-BIT (1024 X 4) BIPOLAR REGISTERED PROM WITH SSR-TM DIAGNOSTIC CAPABILITY
|
Advanced Micro Devices
|
| AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
|
